ZX Ferrum #03 27 февраля 2005

Железо

Plans - Standing flash memory devices with the ultraviolet stitaniem (PPZUF).

  Decided to introduce a new section where you can gather the 
necessary information mation.


Cut out and keep ----------------------- ----------------------
Permanent flash memory devices with ultra-
purple stitaniem (PPZUF)
or
Read Only Memory (ROM).

2716 (573RF2) - reprogrammable ROM 2K x 8 with UV-erasure.


                        Pin assignment:

     A EPROM A0 .. A10 - address inputs;

  8 0 16K DIO CS - chip-select input;

  7 1 0 9 OE - input mode;

  6 January 2, 1910 Upr - programming voltage;

  5 February 3, 1911 DIO0 .. DIO7 - input / output data;

  4 4 3 13

  3 April 5, 1914 Opening hours:

  2 6 5 15

  1 July 6, 1916 CS OE Ai DIOi Upr Mode
 23 8 7 17
 22 January 9 xxz +5 In Store
 Oct. 19 1 Jan. 25 Ai Log in programming.

                         0 0 Ai Exit 25 in control
 18 CS 0 0 Ai Exit 5 in Reading
 20 OE

                5B 24 Some options:
 21 Upr GND 12

                         Sampling time address, ISS 0.45

                         Power consumption, mW 580

                         Programming voltage, 25

                         Programming time, with 100

                         Erase time, min 30

================================================== =============
2732 - reprogrammable ROM 4k x 8 with UV-erasure.


                        Pin assignment:

     A EPROM A0 .. A11 - address inputs;

  8 0 32K DIO CS - chip-select input;

  7 1 0 9 OE - input mode;

  6 January 2, 1910 Upr - programming voltage;

  5 February 3, 1911 DIO0 .. DIO7 - input / output data;

  4 March 4, 1913 OE and Upr - bedineny

  3 April 5, 1914 Opening hours:

  2 6 5 15

  1 July 6, 1916 CS OE Ai DIOi Upr Mode
 23 8 7 17
 22 January 9 xxz +5 In Store
 Oct. 19 1 Jan. 25 Ai Log in programming.
 Nov. 21 0 0 Ai Exit 25 in control

                         0 0 Ai Exit 5 in Reading
 18 CS
 20 OE / Upr

                5B 24 Some options:

               GND 12

                         Sampling time address, ISS 0.45

                         Power consumption, mW 580

                         Programming voltage, 25

                         Programming time, with 100

                         Erase time, min 30

================================================== =============
2764 - reprogrammable ROM 8K x 8 with UV-erasure.


                        Pin assignment:

     A EPROM A0 .. A12 - address inputs;
 10 0 64K DIO CS - chip-select input;

  9 1 0 11 PR - programming signal;

  8 February 1, 1912 Upr - programming voltage;

  7 February 3, 1913 DIO0 .. DIO7 - input / output data;

  6 4 3 15

  5 5 4 16 modes of work:

  4 6 5 17

  3 6 July 1918 CS PR Ai DIOi Upr Mode
 25 8 7 19
 September 24 January 1 xz 0 Storage
 October 21 January 1 Ai entrance 12.5B programming.
 Nov. 23 1 0 xz 12.5B ban prog.

  December 2 0 0 Ai curves. 0 Reading

 22 CS Some options:

 20 PR 12V 28 sampling time addresses, 0.5 ms

                5V 1926 Power, 700 mW

  1 Upr GND 14 Voltage programming of 12.5

                         Programming time, with 800

                         Erase time, min 30

================================================== =============
27,128 - reprogrammable ROM 16K x 8 with UV-erasure.


                        Pin assignment:

     A EPROM A0 .. A13 - address inputs;
 10 0 128K DIO CS - chip-select input;

  9 1 0 11 OE - input mode;

  8 February 1, 1912 Upr - programming voltage;

  7 February 3, 1913 DIO0 .. DIO7 - input / output data;

  6 March 4, 1915 PGM - programming signal;

  5 5 4 16 modes of work:

  4 6 5 17

  3 6 July 1918 CS OE Ai DIOi Upr Mode
 25 8 7 19
 24 January 9 xxz +5 In Store
 October 21 January 1 Ai Log +12.5 B programming.
 Nov. 23 0 0 Ai Output +12.5 B Control

  December 2 0 0 Ai Exit 5 in Reading
 26 13
 27 PGM Some options:

 20 CS Upr a sampling time addresses, 0.3 ms

                5V 1928 Power Programming In 12.5B
 22 OE GND 14

================================================== =============
27,256 - reprogrammable ROM 32K x 8 with UV-erasure.


                        Pin assignment:

     A EPROM A0 .. A14 - address inputs;
 10 0 256K DIO CS - chip-select input;

  9 1 0 11 OE - input mode;

  8 February 1, 1912 Upr - programming voltage;

  7 February 3, 1913 DIO0 .. DIO7 - input / output data;

  6 4 3 15

  5 5 4 16 modes of work:

  4 6 5 17

  3 6 July 1918 CS OE Ai DIOi Upr Mode
 25 8 7 19
 24 January 9 xxz +5 In Store
 October 21 January 1 Ai Log +12.5 B programming.
 Nov. 23 0 0 Ai Output +12.5 B Control

  December 2 0 0 Ai Exit 5 in Reading
 26 13
 27 14 Some options:

 20 CS Upr a sampling time addresses, 0.3 ms

                5V 1928 Power Programming In 12.5B
 22 OE GND 14

================================================== =============
27,512 - reprogrammable ROM 32K x 8 with UV-erasure.


                        Pin assignment:

     A EPROM A0 .. A15 - address inputs;
 10 0 512K DIO CS - chip-select input;

  9 1 0 11 OE - input mode;

  8 February 1, 1912 Upr - programming voltage;

  7 February 3, 1913 DIO0 .. DIO7 - input / output data;

  6 March 4, 1915 OE and Upr combined

  5 5 4 16 modes of work:

  4 6 5 17

  3 6 July 1918 CS OE Ai DIOi Upr Mode
 25 8 7 19
 24 January 9 xxz +5 In Store
 October 21 January 1 Ai Log +12.5 B programming.
 Nov. 23 0 0 Ai Output +12.5 B Control

  December 2 0 0 Ai Exit 5 in Reading
 26 13
 27 14 Some options:

  January 1915

 20 CS / Upr sampling time addresses, 0.3 ms

                5V 1928 Power Programming In 12.5B
 22 OE GND 14



    Graphics signals.

          Record Data

       ------ ------------ ------ / /
         / /

       ------ ------------ ----- --------- <- Ubr
        /

  Uoe ------
    /

   ----------------------------- 0V